Evaluation of the Minority-Carrier Lifetime of IMM3J Solar Cells under Proton Irradiation Based on Electroluminescence

The shortening of the minority carrier lifetime is main reason for degradation electrical performance solar cells; therefore, it particularly important to evaluate inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs cells. We each subcell IMM3J cells before and after 2 MeV proton irradiation by electroluminescence (EL) method. Before irradiation, lifetimes GaInP, GaAs, InGaAs subcells were 6.99 × 10−9 s, 3.09 10−8 2.31 respectively. After degraded significantly. When fluence was 1012 cm−2, 1.63 10−10 1.56 10−11 1.65 These results provide a reference predicting short-circuit current open-circuit voltage subcell.